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Analýza nanostruktur metodou ToF-LEIS / Analysis of Nanostructures by ToF-LEIS

The presented thesis deals with the utilization of TOF-LEIS analytical method in the area of nanostructure analysis. A new procedure for depth profiling of the elemental composition of the sample, based on the alternate measurement with the DSIMS method, was established. The TOF-LEIS method is able to detect the interface between the layers before its mixing by the ion beam of the DSIMS method. Furthermore, a procedure of TOF-LEIS spektra modification was established to obtain the actual concentration of elements in the sample by reduction of a multiple collision contribution. By comparison of TOF-LEIS spectra with the results received by the DSIMS method the ratio of molybdenum and silicon ion yields was obtained. In the next section advantages of the TOF-LEIS method in combination with XPS during analysis of thermal stability of gold nanoparticles are presented. The mutual complementarity of both methods is shown and final conclusions are supported by electron microscopy images. The final section deals with a newly assembled apparatus for the TOF-SARS analytical method and shows its possibilities regarding the detection of hydrogen on the graphene.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:234584
Date January 2015
CreatorsDuda, Radek
ContributorsKrál, Jaroslav, Mašek, Karel, Dub, Petr
PublisherVysoké učení technické v Brně. Fakulta strojního inženýrství
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/doctoralThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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