Realization of low-resistance electrical contacts on both sides of a solar cell is essential for obtaining the best possible performance. A key component of a solar cell is a metal contact on the illuminated side of the cell which should efficiently collect carriers. These contacts can be formed using an opaque metal grid/finger pattern. The metal electrode may be used alone or in combination with a broad-area transparent conductive film. This work aims at investigating the impact of the electrical contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material properties, motivates the study of InGaN photovoltaic devices. A number of groups have recently investigated InGaN-based homo-junction and hetero-junction p-i-n solar cells. However, very few groups have worked on InGaN Schottky solar cells. Compared to p-n junctions, Schottky barrier solar cells are cheaper to grow and fabricate; they are also expected to improve the spectral response because of near surface depletion regions in the shorter wavelength regions. In this particular work on InGaN based solar cells, a Schottky diode structure was used to avoid the issue of highly resistive p-type InGaN. In this study, platinum (Pt) is used to form a Schottky barrier with an InGaN/GaN absorber region. Electrical and optical properties of platinum films are investigated as a function of their thickness. InGaN/GaN Schottky solar cells with platinum as the transparent conductive film are reported and their performance is evaluated as a function of the metal thickness. / Master of Science
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/50527 |
| Date | 18 September 2014 |
| Creators | Jain, Aditya |
| Contributors | Electrical and Computer Engineering, Guido, Louis J., Plassmann, Paul E., Lu, Guo Quan |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Detected Language | English |
| Type | Thesis |
| Format | ETD, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
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