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Enhanced hot-hole degradation and negative bias temperature instability (NBTI) in p⁺-poly PMOSFETs with oxynitride gate dielectrics /

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 158-172). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/49214443
Date January 2000
CreatorsChen, Yuh-yue,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceDigital version accessible at:

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