Abstract
The behaviors of the TaNx barrier layer that placed
between the Cu metal and GaAs have been studied
by using X-ray diffraction, X-ray photoelectron
spectroscopy and scanning electron microscopy.
The TaNx and Cu films were deposited on GaAs
sequentially with RF magnetron sputter.
With a 250 nm thick TaNx barrier layer, the Cu
metal can be impeded from reacting with GaAs
substrate at 575¢Jannealed for one hour.
Within an As or Ga overpressure environment condition,
the failure temperature still occurred below 600¢J.
The failure of TaNx diffusion barrier layer for
preventing the reaction of the Cu and GaAs was originated
for the dissociation of the GaAs itself at 580¢J.
The outgoing As atoms increased the deterioration speed
of the TaNx film and reduced its blocking ability.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0620100-141802 |
| Date | 20 June 2000 |
| Creators | Yueh, Zhi-Wei |
| Contributors | Sheng-Lung Huang, Bae-Heng Tseng, Huang-Yeu Hsieh |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.002 seconds