This work analyses the phenomenon of diffusion in crystalline Si. Basic diffusion mechanisms and equations are described in the basic diffusion characteristics (diffusion coefficient, electrical conductivity and the concentration of vacancies) are analyzed by means of vacancies, what are generated by the beams of x – rays. The obtained facts suggest the makings of diffusion in crystalline Si at room temperature.
| Identifer | oai:union.ndltd.org:LABT_ETD/oai:elaba.lt:LT-eLABa-0001:E.02~2005~D_20050608_083433-78958 |
| Date | 08 June 2005 |
| Creators | Budzinskas, Rolandas |
| Contributors | Girdauskas, Valdas, Ragulienė, Loreta, Šlekienė, Violeta, Donėlaitė, Renata, Norgėla, Žilvinas, Lankauskas, Alfredas, Janavičius, Arvydas, Siauliai University |
| Publisher | Lithuanian Academic Libraries Network (LABT), Siauliai University |
| Source Sets | Lithuanian ETD submission system |
| Language | Lithuanian |
| Detected Language | English |
| Type | Master thesis |
| Format | application/pdf |
| Source | http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2005~D_20050608_083433-78958 |
| Rights | Unrestricted |
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