Diamond-Like carbon (DLC) films has a lot of advantages, such as high hardness, high thermal conductivity, low expansion coefficient, low friction coefficient, high chemical stability, high impedance. These properties make the DLC films suitable for becoming an insulator in metal insulator semiconductor structure. In this study, DLC films were deposited by electro-deposition technique onto silicon (Si) substrates, in which a mixture of acetic acid and water is used as the electrolyte. The structure of the DLC films is characterized by Raman Spectroscopy. The thermal evaporation technique was used to deposit an aluminum films on the DLC/Si-substrates, to make it as the structure of metal-insulator semiconductor (MIS), and the electrical properties of the MIS were measured by semiconductor parameter analyzer.
DLC films were deposited by varying the parameters of electro-deposition process included mainly as the concentration of solution, the spacing between electrode and silicon substrate, deposition temperature, and the applied voltages. The properties and film growth of DLC attributed to the effect of parameters were described in detail. Finally, an electro-deposition model is obtained to describe the growth mechanism of electro-deposition of DLC film.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0719106-205009 |
| Date | 19 July 2006 |
| Creators | Wu, Chin-Lung |
| Contributors | Herng-Yih Ueng, Wang-Chuang Kuo, Chih-Hsiung Liao, Wei-Chou Hsu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-205009 |
| Rights | not_available, Copyright information available at source archive |
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