Return to search

DLC Film Growth and MIS Devices Characterization

Diamond-Like carbon (DLC) films has a lot of advantages, such as high hardness, high thermal conductivity, low expansion coefficient, low friction coefficient, high chemical stability, high impedance. These properties make the DLC films suitable for becoming an insulator in metal insulator semiconductor structure. In this study, DLC films were deposited by electro-deposition technique onto silicon (Si) substrates, in which a mixture of acetic acid and water is used as the electrolyte. The structure of the DLC films is characterized by Raman Spectroscopy. The thermal evaporation technique was used to deposit an aluminum films on the DLC/Si-substrates, to make it as the structure of metal-insulator semiconductor (MIS), and the electrical properties of the MIS were measured by semiconductor parameter analyzer.
DLC films were deposited by varying the parameters of electro-deposition process included mainly as the concentration of solution, the spacing between electrode and silicon substrate, deposition temperature, and the applied voltages. The properties and film growth of DLC attributed to the effect of parameters were described in detail. Finally, an electro-deposition model is obtained to describe the growth mechanism of electro-deposition of DLC film.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0719106-205009
Date19 July 2006
CreatorsWu, Chin-Lung
ContributorsHerng-Yih Ueng, Wang-Chuang Kuo, Chih-Hsiung Liao, Wei-Chou Hsu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-205009
Rightsnot_available, Copyright information available at source archive

Page generated in 0.002 seconds