In this work, we have utilized an ion beam process known as gettering to migrate implanted Ni ions much deeper into the bulk substrate than their initial projected end of the range. The projected mean depth is known as Rp. The gettering effect is the most crucial part of the fabrication and we have found that for an H fluence of 3x 1016 cm-2 there is a threshold fluence of approximately 7.5 x 1015 cm-2 that cannot be surpassed if the gettering process is to be completed along with the substrate recovered to the high crystalline quality. This hard threshold is due to the gettering process relaxation induced mechanism that is responsible for migrating the Ni to the Rp/2 location while the H is vacating during the thermal annealing process. If the total number of vacancies produced by the H dissociation is not substantially larger than the total number of implanted Ni atoms the Ni will migrate to the Rp location of the Ni implantation at the amorphous and crystalline interface and toward the surface. When the gettering condition is not met the resulting magnetic responses vary from an exceptionally weak ferromagnetic response to not exhibiting a magnetic response. Additionally, conducting the ion implantation at an elevated substrate temperature does not increase the threshold Ni fluence above our established limit. During the elevated substrate temperature implantation, the hydrogen ions diffuse out to the surface resulting in less migration of the Ni to the initial Rp location within the Ni implantation region. The elevated temperature implantation condition appears to not create a sharp amorphous crystalline interface at the end of the range for the Ni implantation.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc1808341 |
| Date | 05 1900 |
| Creators | Jones, Daniel C. |
| Contributors | Rout, Bibhudutta, Glass, Gary A., Weathers, Duncan L., Bouanani, Mohamed El |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | viii, 66 pages : illustrations (chiefly color), Text |
| Rights | Public, Jones, Daniel C., Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved. |
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