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Transport properties of phosphorus and boron doped LPCVD silicon films and their interpretation.

by Pei-hsuon Chan. / Parallel title in Chinese characters. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1988. / Bibliography: leaves 227-231.

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_320257
Date January 1988
ContributorsChan, Pei-hsuon., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, viii, 231 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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