Silicon Carbide devices are proving to be most promising for high power and high-temperature application in recent times. Efficient and accurate characterization of the device characteristics is key to the fabrication of high quality devices and reproduction of the quality of the devices fabricated. Capacitance-Voltage profiling is one of the most commonly used techniques to measure the doping profiles of semiconductors. However, interpretation of C-V profiling in the presence of traps in the material becomes complicated. Various complications arising from compensation between donors and acceptors, partial ionization of dopants and presence of deep level impurities could yield anomalous measured profile. Silicon Carbide being a wide bandgap semiconductor, many impurities commonly found such as Boron and Aluminum are not completely ionized at Room temperature. This leads to complications in calculating doping profiles when the trap levels are deeper. Other complications arising due to series resistance effect and diode edge effect may also affect the measured profile. Accounting for these complications may be difficult by mere observation of the measured profile. Simulation can be an excellent tool to extract parameters of interest from experimental results that are influenced by non-ideal effects. Fitting of the experimentally obtained data with simulated profile using specific models may be a useful technique to quantitatively account for the deviations from the actual profiles.
| Identifer | oai:union.ndltd.org:MSSTATE/oai:scholarsjunction.msstate.edu:td-2474 |
| Date | 07 May 2005 |
| Creators | Krishnan, Bharat |
| Publisher | Scholars Junction |
| Source Sets | Mississippi State University |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Theses and Dissertations |
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