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Unveiling the double-well energy landscape in a ferroelectric layer

The properties of ferroelectric materials, which were discovered almost a century ago¹ , have led to a huge range of applications, such as digital information storage² , pyroelectric energy conversion³ and neuromorphic computing⁴⁻⁵ . Recently, it was shown that ferroelectrics can have negative capacitance⁶⁻¹¹, which could improve the energy efficiency of conventional electronics beyond fundamental limits¹²⁻¹⁴. In Landau–Ginzburg–Devonshire theory¹⁵⁻¹⁷, this negative capacitance is directly related to the doublewell shape of the ferroelectric polarization–energy landscape, which was thought for more than 70 years to be inaccessible to experiments¹⁸. Here we report electrical measurements of the intrinsic double-well energy landscape in a thin layer of ferroelectric Hf₀.₅Zr₀.₅O₂. To achieve this, we integrated the ferroelectric into a heterostructure capacitor with a second dielectric layer to prevent immediate screening of polarization charges during switching. These results show that negative capacitance has its origin in the energy barrier in a double-well landscape. Furthermore, we demonstrate that ferroelectric negative capacitance can be fast and hysteresis-free, which is important for prospective applications¹⁹. In addition, the Hf₀.₅Zr₀.₅O₂ used in this work is currently the most industry-relevant ferroelectric material, because both HfO₂ and ZrO₂ thin films are already used in everyday electronics²⁰. This could lead to fast adoption of negative capacitance effects in future products with markedly improved energy efficiency.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:81518
Date17 October 2022
CreatorsHoffmann, Michael, Fengler, Franz P. G., Herzig, Melanie, Mittmann, Terence, Max, Benjamin, Schroeder, Uwe, Negrea, Raluca, Lucian, Pinitilie, Slesazeck, Stefan, Mikolajick, Thomas
PublisherSpringer
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation1476-4687, https://doi.org/10.1038/s41586-018-0854-z, info:eu-repo/grantAgreement/European Commission/H2020 | ECSEL-RIA/692519//Ultra-Low PoweR technologIes and MEmory architectures for IoT/PRIME

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