The d-c. and a-c. characteristics of p-n-p diodes were measured and interpreted on the basis of present theories. The equivalent parallel capacitance of these diodes was found to decrease as (f)⁻³/₂ at high frequencies in accordance with diffusion theory; from these measurements the lifetime of a hole in the base was estimated to be about 10 microseconds.
The current fluctuations in the diode were measured by comparing them with a standard noise diode, and the results represented as a shunt noise current generator. From the frequency spectrum of the noise it was deduced that it consisted mainly of excess or 1/f noise except at low currents and high frequencies, and here the results were interpreted as a combination of shot and thermal noise. The deduced hot carrier temperature was compared with the theoretical values of Shockley and poor agreement was obtained, indicating inadequacy of the present theory. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/41046 |
Date | January 1959 |
Creators | Huntley, David John |
Publisher | University of British Columbia |
Source Sets | University of British Columbia |
Language | English |
Detected Language | English |
Type | Text, Thesis/Dissertation |
Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
Page generated in 0.0015 seconds