Numerical process and device simulation tools are used in this work to analyze the physical mechanisms that contribute to catastrophic failure of power Schottky diodes exposed to an electron beam pulse. Simulations suggest that the diodes fail at the guard ring edge due to depletion region collapse that effectively shorts the guard ring to the substrate, leading to high current densities and thermal runaway. Numerical simulations are also used to examine techniques to increase survivability.
| Identifer | oai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-03272003-122718 |
| Date | 18 April 2003 |
| Creators | Ralston-Good, Jeremy |
| Contributors | Dr. Ronald Schrimpf, Dr. Greg Walker |
| Publisher | VANDERBILT |
| Source Sets | Vanderbilt University Theses |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.library.vanderbilt.edu/available/etd-03272003-122718/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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