We have studied 1/f noise and total-dose response associated with Al2O3/SiOxNy/Si(100) gate dielectrics. Both the radiation-induced threshold-voltage shifts and the low-frequency noise are significantly larger than are typically observed for high-quality thermal SiO2 thin films of comparable thicknesses.
Charge trapping effects and low frequency noise are studied in the buried oxides of fully depleted nMOS SOI transistors. Silicon implantation in the buried oxide creates a higher density of oxygen vacancy-related defects that reduce the net oxide-trap charge, but increase the back-channel 1/f noise. The 1/f noise of MOSFETs fabricated on silicon-implanted SOI buried oxides shows little change after 1 Mrad(SiO2) irradiation. The temperature and frequency dependences of the 1/f noise of back channel SOI nMOS transistors shows thermally-activated charge exchange between the Si channel and defects in the buried oxide. Silicon implantation also creates shallow electron traps in the buried oxide, leading to large bias instabilities. Whether these traps are filled or empty does not significantly affect the 1/f noise. A detailed study of the 1/f noise, temperature dependence of charge trapping, and radiation response of these SOI nMOSFET transistors shows that charge exchange with shallow electron traps in the buried oxide occurs mostly via tunneling. Low frequency noise in the double-gate mode of device operation is also investigated, and found to help mitigate the 1/f noise in fully depleted SOI MOSFETs.
| Identifer | oai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-11142004-232600 |
| Date | 19 November 2004 |
| Creators | Xiong, Hao D. |
| Contributors | Dan Fleetwood, Ron Schrimpf, Robert Weller, Tim Holman, Sokrates Pantelides |
| Publisher | VANDERBILT |
| Source Sets | Vanderbilt University Theses |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.library.vanderbilt.edu/available/etd-11142004-232600/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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