The relation between the electrical property and the material microstructure of InSb grown on Si utilizing electron beam evaporation technology has been investigated. The improvement of the InSb electrical property with controlling annealing environment after post annealing is demonstrated.
The crystal structure of InSb thin films were characterized with X-ray diffraction (XRD) and the surface morphology was examined by scanning electron microscope (SEM). The composition of InSb films was analyzed by electron probe microscope analysis (EPMA) and the mobility of InSb films were measured by Hall measurement. Finally, the grain size and texture of InSb films microstructure were studied by transmission electron microscope (TEM).
The films were grown with different In/Sb flux ratio by controlling electron energy during electron evaporation. The results show that the poly-InSb films were formed due to large lattice difference between Si and InSb . The InSb films which had higher In concentration behave higher mobility. The highest mobility of the as-grown film is around 12000(cm2/Vs). The mobility of InSb can be improved to 26000 (cm2/Vs) by added extra Sb source annealed at 500¢J for 5 hours in an sealed ampoule. The extra Sb which dissolved with the existed In droplet in the film and adjust the composition ratio of In/Sb closing to 1:1. Besides, the post-annealing process provides the InSb film to gain much better texture. Both these two factors contribute to improve the electrical property of InSb films.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701102-142752 |
Date | 01 July 2002 |
Creators | Jang, Chih-Yuan |
Contributors | K. Y. Hsieh, H. L. Huang, D. S. Gan |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701102-142752 |
Rights | off_campus_withheld, Copyright information available at source archive |
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