Part A of two Project Reports; Part B can be found at: http://hdl.handle.net/11375/17691 / <p>The annealing behaviour of 15N implanted, aluminum doped-SiC has been studied by measuring the differential capacitance as a function of applied bias. The samples were doubly implanted at 450°c with 45 Kev and 25 Kev ions, for a dose of 10^16/cm^2 at each energy.</p> <p> An n-i-p structure with a thick insulator region was found after annealing at 1000°c. The thickness of this i region could be substantially reduced with additional annealing at higher temperatures, and a fairly good n-p junction was obtained
after 1480°c anneal.</p> <p> About 20-30% of the implanted nitrogen ions were found to be electrically active.</p> <p> The C-V behaviour was found to have large variations with the a.c. measuring frequency.</p> / Thesis / Master of Engineering (MEngr)
Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/16881 |
Date | January 1975 |
Creators | Chan, Albert M. C. |
Contributors | Thompson, D.A., Engineering Physics |
Source Sets | McMaster University |
Language | en_US |
Detected Language | English |
Type | Thesis |
Page generated in 0.0021 seconds