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Fabrication and characterization of nanowire devices. / 纳米线器件的制备和表征 / Fabrication and characterization of nanowire devices. / Na mi xian qi jian de zhi bei he biao zheng

Liang, Hui = 纳米线器件的制备和表征 / 梁慧. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 45-48). / Abstracts in English and Chinese. / Liang, Hui = Na mi xian qi jian de zhi bei he biao zheng / Liang Hui. / Chapter Chapter 1 --- Nanowire-based devices --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.1.1 --- Properties of various nanowires --- p.2 / Chapter 1.1.2 --- Nanowire growth methods --- p.3 / Chapter 1.1.3 --- Introduction to EBL --- p.4 / Chapter 1.1.4 --- Properties of nanowire and the arrays and related devices --- p.6 / Chapter Chapter 2 --- Experimental --- p.9 / Chapter 2.1 --- Nanowire preparation --- p.9 / Chapter 2.1.1 --- ZnS nanowire growth --- p.9 / Chapter 2.1.2 --- Sb2S3 nanowire growth --- p.10 / Chapter 2.2 --- Device fabrication --- p.10 / Chapter 2.2.1 --- Single-nanowire device --- p.10 / Chapter 2.2.2 --- Multiple-nanowire device --- p.17 / Chapter 2.2.3 --- Silicon device --- p.17 / Chapter 2.3 --- Characterizations --- p.18 / Chapter 2.3.1 --- Morphological and structural characterizations of the nanowires --- p.18 / Chapter 2.3.2 --- Two-probe measurements --- p.18 / Chapter 2.3.3 --- Four-probe measurements --- p.19 / Chapter Chapter 3 --- Results and Discussion --- p.21 / Chapter 3.1 --- Optimal factors for sample preparation --- p.21 / Chapter 3.1.1 --- Trial of spin coating --- p.21 / Chapter 3.1.2 --- Trial of Coating thickness --- p.21 / Chapter 3.1.3 --- Trial of e-beam lithography --- p.22 / Chapter 3.1.4 --- Trial of dosage --- p.23 / Chapter 3.1.5 --- Trial of development time --- p.26 / Chapter 3.2 --- Electrical Properties of devices made --- p.28 / Chapter 3.2.1 --- UV-visible response of single ZnS nanowire devices --- p.28 / Chapter 3.2.2 --- The optoelectronic characteristics of single Sb2S3 nanowire devices --- p.32 / Chapter 3.2.3 --- The optoelectronic characteristics of multiple-nanowire devices --- p.35 / Chapter 3.2.4 --- Temperature dependent resistance and magnetoresistance of the silicon device --- p.41 / Chapter Chapter 4 --- Conclusions --- p.44 / Chapter Chapter 5 --- References --- p.45

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_327392
Date January 2011
ContributorsLiang, Hui., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, iv, 48 leaves : ill. (some col.) ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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