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Analysis of plasma etch defects utilizing a comb test structure

Three metal compositions are patterned via plasma etching into comb structures. The comb structures have pitches of 4 μm, 5 μm, 7 μm and 12 μm, with a line width of 2 μm, on a field oxide of 8,000 Angstroms thickness, using <111> p-type substrates. These comb test structures have been used to determine the number of bridges, and thus the yield, of the metal compositions: pure aluminum, silicon(2%)-aluminum, and copper(0.5%)-silicon(2%)-aluminum. Bridge failures are photographed and classified according to the source of the defect. The defects due to plasma particles are used to determine a yield model for this etch process. Through the use of yield model and test structure data the etch process is evaluated for the different metal systems. This allows a quantitative comparison of the systems in terms of defect clustering, defect density and defect size distribution, and hence projections for the best yielding process via the yield model.

Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/278211
Date January 1992
CreatorsDeLoach, Charles Alan, 1960-
ContributorsParks, Harold G.
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
Languageen_US
Detected LanguageEnglish
Typetext, Thesis-Reproduction (electronic)
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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