<p>The radiation damage and electrical properties of nitrogen implanted silicon, germanium and silicon cardine have been investigated. The object of this investigation has been to relate the damage annealing properties of the implanted semiconductor to the observed electrical behaviour, in an attempt to understand the role of nitrogen in these materials.</p> <p>The study has shown that donor behaviour can be obtained in nitrogen implanted silicon. Capacitance-voltage and Hall effect measurements performed on the implanted layer have indicated that less than 1% of the implanted nitrogen has become electrically active, following anneals in the 700-900ºC range. The ionization energy of nitrogen in silicon has been found by low temperature Hall measurements to be 0.017 ± 0.002 eV. This result has been shown to be independent of the annealing time and the implantation temperature. For doses above ~6 x 10¹4 N/cm², donor results are no longer observed and the damage results have shown that the silicon crystal has no recrystallized well. The results of the above measurements, together with the characteristics of nitrogen implanted diodes and the results of a damage study of nitrogen implanted silicon are presented, and the role of nitrogen in silicon is discussed.</p> <p>The results of electrical and lattice location measurements on nitrogen implanted germanium have shown that nitrogen does not become a donor in germanium. The lattice location measurements have used the 14N(d,α)¹²C nuclear reaction, and have shown that the implanted nitrogen atoms are on interstitial lattice positions. The results of damage measurements obtained by backscattering techniques, together with the electrical and lattice location results are presented.</p> <p>This study has shown that nitrogen implanted silicon carbide exhibits donor behaviour following a high temperature anneal. This result was deduced from the properties of nitrogen implanted silicon carbide diodes and from lattice location measurements performed with the 15N(p,α)¹²C nuclear reaction. These lattice location measurements have shown that approximately 50% of the implanted nitrogen atoms are on the substitutional lattice sites, following an anneal at 1450ºC. This is in excellent agreement with the value of 50% previously reported by other authors as deduced from electrical measurements. Although some problems with the annealing of heavily doped silicon carbide remain to be solved, this study has shown that ion implantation promises to be a useful technique for doping this material.</p> / Doctor of Philosophy (PhD)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/5657 |
| Date | 09 1900 |
| Creators | Mitchell, Blair James |
| Contributors | Shewchun, J., Electrical Engineering |
| Source Sets | McMaster University |
| Detected Language | English |
| Type | thesis |
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