The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. In this work, we can get the dependence of surface electric field on external biased voltage from analyzing the Franz- Keldysh oscillations and the way of fast Fourier transform on condition that weakly modulated field, further more we can get the dependence of effective reduced mass on changed photon energy.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701104-150710 |
Date | 01 July 2004 |
Creators | Chen, Ying-shiuan |
Contributors | Der-jun Jang, I-min Jiang, Dong-po Wang |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710 |
Rights | unrestricted, Copyright information available at source archive |
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