Magistriniame darbe tyrinėjamos elektroninės savybės įvairioms puslaidininkinėms medžiagoms. Tarp jų eksperimentiškai ir teoriškai tirti SbSI - tipo kristalai. Išmatuotos jų voltamperinės charakteristikos įvairiose temperatūrose bei srovės temperatūrinės priklausomybės esant skirtingai įtampai. Iš matavimų paskaičiuotas tarp metalo ir puslaidininkio susidarantis barjero aukštis, kuris vėliau buvo panaudotas teorinių – eksperimentinių rezultatų palyginimui. Eksperimentiniams elektrinio laidumo matavimams paaiškinti remtasi įvairiomis fononais stimuliuoto tuneliavimo teorijomis, kurių taikymui papildomai apskaičiuota elektronų ir fononų sąveikos konstanta esant skirtingoms temperatūroms. Taip pat įvertinti kiti, nemažiau elektriniame laidume svarbius, parametrai. Darbe parodyta, kad fononais stimulioto tuneliavimo teorijos efektyviai aprašo elektrinį laidumą tirtose medžiagose prijungiant prie jų metalo kontaktus. / In this work experimental and theoretical investigations of the high electric field electrical properties in semiconductors with Schottky barrier are presented. Experimental research is given for SbSI – type crystals. Theoretical calculations and comparison with experimental data were made using electrical phonon-assisted tunnelling model (PhAT), which is usable for explanation of temperature-field dependent conductivity in wide branch of materials: semiconductors, dielectrics, inorganic, organic and other materials.
PhAT model were used including well determined parameters: effective mass of the charge carrier, participating phonon energy, barrier height and electron-phonon interaction. Barrier height was experimentally measured and found for SbSI, SbSe0.2S0.8I, SbSe0.5S0.5I, SbSeI crystals. The results of the temperature dependence of electron–phonon (e–ph) interaction in the inquiring semiconductors were also calculated. It is shown that these semiconductors have kin e–ph interaction. It varies nearly for about ~ 2.6.
It has been shown that the temperature dependent I-V characteristics of SbSeI crystals can be explained by the phonon-assisted tunnelling of charge carriers from the states located in the high electric field region at the electrode-crystal junction. The electron tunnelling probability W(E, T) from traps of the apparent depth to the conduction band was computed using evaluated electron-phonon interaction constant and effective mass of the polaron. The... [to full text]
| Identifer | oai:union.ndltd.org:LABT_ETD/oai:elaba.lt:LT-eLABa-0001:E.02~2008~D_20080924_181447-11923 |
| Date | 24 September 2008 |
| Creators | Sereika, Raimundas |
| Contributors | Bondarenko, Vladimiras, Banėnienė, Milia, Vaišnoras, Rimantas, Rimeika, Alfonsas, Svirskas, Kęstutis, Lazauskaitė, Roma, Udris, Arvydas, Lazauskas, Valentinas, Audzijonis, Algirdas, Lapeika, Vytautas, Pipinys, Povilas, Kiveris, Antanas, Vilnius Pedagogical University |
| Publisher | Lithuanian Academic Libraries Network (LABT), Vilnius Pedagogical University |
| Source Sets | Lithuanian ETD submission system |
| Language | Lithuanian |
| Detected Language | English |
| Type | Master thesis |
| Format | application/pdf |
| Source | http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2008~D_20080924_181447-11923 |
| Rights | Unrestricted |
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