Semiconductors technologies are rapidly evolving driven by the need for higher
performance demanded by applications. Thanks to the numerous advantages that
it offers, gallium nitride (GaN) is quickly becoming the technology of reference
in the field of power amplification at high frequency. The RF power density of
AlGaN/GaN HEMTs (High Electron Mobility Transistor) is an order of magnitude
higher than the one of gallium arsenide (GaAs) transistors. The first demonstration
of GaN devices dates back only to 1993. Although over the past few years some
commercial products have started to be available, the development of a new
technology is a long process. The technology of AlGaN/GaN HEMT is not yet
fully mature, some issues related to dispersive phenomena and also to reliability
are still present. Dispersive phenomena, also referred as long-term memory effects,
have a detrimental impact on RF performances and are due both to the presence
of traps in the device structure and to self-heating effects. A better understanding
of these problems is needed to further improve the obtainable performances.
Moreover, new models of devices that take into consideration these effects are
necessary for accurate circuit designs. New characterization techniques are thus
needed both to gain insight into these problems and improve the technology and
to develop more accurate device models.
This thesis presents the research conducted on the development of new charac-
terization and modelling methodologies for GaN-based devices and on the use of
this technology for high frequency power amplifier applications.
| Identifer | oai:union.ndltd.org:unibo.it/oai:amsdottorato.cib.unibo.it:5774 |
| Date | 23 May 2013 |
| Creators | Niessen, Daniel <1983> |
| Contributors | Santarelli, Alberto |
| Publisher | Alma Mater Studiorum - Università di Bologna |
| Source Sets | Università di Bologna |
| Language | English |
| Detected Language | English |
| Type | Doctoral Thesis, PeerReviewed |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
Page generated in 0.002 seconds