Despite the fast development of telecommunications systems experienced during the last two decades, much progress is expected in the coming years with the introduction of new solutions capable of delivering fast data-rates and ubiquitous connectivity. However, this development can only happen through the evolution of radio-frequency systems, which should be capable of working at high-power and high-speed. At the same time, the power dissipation of these systems should be minimized. In this dissertation, methods for the characterization and modeling of transistors and power amplifiers are presented, along with the necessary nonlinear measurements techniques. In particular, dynamic electrical effects, originated by the properties of the semiconductor materials and by the system configurations, are investigated. Consequently, these phenomena, which cannot be ignored to obtain the wanted performance, are empirically identified and included in models for Gallium Nitride (GaN) transistors and power amplifiers driven by a dynamic voltage supply.
| Identifer | oai:union.ndltd.org:unibo.it/oai:amsdottorato.cib.unibo.it:7383 |
| Date | 19 April 2016 |
| Creators | Gibiino, Gian Piero <1986> |
| Contributors | Filicori, Fabio, Schreurs, Dominique |
| Publisher | Alma Mater Studiorum - Università di Bologna |
| Source Sets | Università di Bologna |
| Language | English |
| Detected Language | English |
| Type | Doctoral Thesis, PeerReviewed |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
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