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Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/16426
Date08 1900
CreatorsNamkoong, Gon
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

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