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The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaOâ‚‚) substrates

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/13903
Date12 1900
CreatorsKang, Sangbeom
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeDissertation
Format238 bytes, text/html
RightsAccess restricted to authorized Georgia Tech users only.

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