InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure. We use photoreflectance spectroscopy to investigate bandgap of InN at different temperature. We use third derivative reflectance formula of low field to fit experimental data and appraisal the type of electron transition.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0704105-134536 |
| Date | 04 July 2005 |
| Creators | Chen, Chao-nien |
| Contributors | Yan-Ten Lu, Dong-Po Wang, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536 |
| Rights | withheld, Copyright information available at source archive |
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