We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors.
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76883 |
Date | 07 December 2021 |
Creators | Sessi, V., Mulaosmanovic, H., Hentschel, R., Pregl, S., Mikolajick, T., Weber, W. M. |
Publisher | IEEE |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 978-1-5386-5336-4, 10.1109/NANO.2018.8626257 |
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