There is a strong desire to develop new, advanced materials that can overcome the scaling difficulties present in current memory devices. Organic materials are promising candidates for resistive switching memory devices due to their low-cost advantage, simplified manufacturing process, compatibility with flexible electronic devices, and ease of being constructed cross-point cell array architecture. The operation of these types of devices requires change of device resistance when subjected to an electrical bias. We study three different systems that can achieve this requirement, wherein one is believed to be related to the charge storage in metallic trapping site, inducing space-charge field, inhibiting the charge injection; another exhibits negative differential resistance (NDR) characteristics; and the electrical transition of the third one is believed to be attributed to the formation of filaments. / text
| Identifer | oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/17805 |
| Date | 07 September 2012 |
| Creators | Tu, Chia-Hsun, 1973- |
| Source Sets | University of Texas |
| Language | English |
| Detected Language | English |
| Format | electronic |
| Rights | Copyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works. |
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