Hot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric /

Description

Thesis (Ph. D.)--University of Hong Kong, 1992.

Links & Downloads

1. http://sunzi.lib.hku.hk/hkuto/record.jsp?B13209723

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/51348534
Date	January 1992
Creators	Ma, Zhi-jian.
Publisher	[Hong Kong : University of Hong Kong],
Source Sets	OCLC
Language	English
Detected Language	English
Source	View the Table of Contents & Abstract.