Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology physics, reliability, and process development /

Description

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/2287/rhees15037.pdf

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Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/70960749
Date	January 1900
Creators	Rhee, Se Jong,
Publisher	[Austin, Tex. : University of Texas Libraries,
Source Sets	OCLC
Language	English
Detected Language	English