3-dimensional integration has become a standard to further increase the transistor density and to enhance the integrated functionality in microchips. Integrated circuits are stacked on top of each other and copper-filled through-silicon VIAs (TSVs) are the industry-accepted choice for their vertical electrical connection. The aim of this work is to functionalize the TSVs by implementing vertical field-effect transistors inside the via holes. The front and back sides of 200 ... 300 µm thin silicon wafers were doped to create the source/drain regions of n- and p-FETs. The TSVFETs showed very stable saturation currents and on/off current ratios of about 10^6 (n-TSVFET) and 10^3 (p-TSVFET) for a gate voltage magnitude of 4V. The use of hafnium zirconium oxide on a thin SiO_2 interface layer as gate dielectric material in a p-TSVFET, enabled the implementation of a charge trapping memory inside the TSVs, showing a memory window of about 1V. This allows the non-volatile storage of the transistor on/off state. In addition, the demonstration of the use of gallium as the source/drain dopant in planar p-FET test structures (ion implanted from a focused ion beam tool) paves the way for maskless doping and for a process flow with a low thermal budget. It was shown, that ion implanted gallium can be activated and annealed at relatively low temperatures of 500 °C ... 700 °C.:Abstract / Kurzzusammenfassung
Danksagung
Index I
List of Figures III
List of Tables X
List of Symbols XI
List of Abbreviations XV
1 Introduction 1
2 Fundamentals 5
2.1 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 5
2.1.1 Historical Development - Technological Advancements 7
2.1.2 Field-Effect Transistors in Semiconductor Memories 10
2.2 3D Integration and the Use of TSVs (Through Silicon VIAs) 16
2.3 Doping of Silicon 19
2.3.1 Doping by Thermal Diffusion 20
2.3.2 Doping by Ion Implantation 22
3 Electrical Characterization 24
3.1 Resistivity Measurements 24
3.1.1 Resistance Determination by Four-Point Probes Measurement 24
3.1.2 Contact Resistivity 27
3.1.3 Doping Concentration 32
3.2 C-V Measurements 35
3.2.1 Fundamentals of MIS C-V Measurements 35
3.2.2 Interpretation of C-V Measurements 37
3.3 Transistor Measurements 41
3.3.1 Output Characteristics (I_D-V_D) 41
3.3.2 Transfer Characteristics (I_D-V_G) 42
4 TSV Transistor 45
4.1 Idea and Motivation 45
4.2 Design and Layout of the TSV Transistor 47
4.2.1 Design of the TSV Transistor Structures 47
4.2.2 Test Structures for Planar FETs 48
5 Variations in the Integration Scheme of the TSV Transistor 51
5.1 Doping by Diffusion from Thin Films 51
5.1.1 Determination of Doping Profiles 52
5.1.2 n- and p- TSVFETs Doped Manufactures by the Use of the Diffusion Technique 59
5.2 Ferroelectric Hafnium-Zirconium-Oxide (HZO) in the Gate Stack 81
5.2.1 Planar ferroelectric p-MOSFETs Doped by Thermal Diffusion 82
5.2.2 p-TSVFETs with Hafnium-Zirconium-Oxide Metal Gate 90
5.3 Doping by Ion Implantation of Gallium with a Focused Ion Beam (FIB) Tool 96
5.3.1 Ga doped Si Diodes 97
5.3.2 Planar p-MOSFETs Doped by Ga Implantation 108
5.3.3 Proposal for a parallel integration of Cu TSVs and p-TSVFETs 117
6 Summary and Outlook 120
Bibliography XVIII
A Appendix XXXVI
A.1 Resistivity and Dopant Density XXXVI
A.2 Mask set for the TSVFET XXXVII
A.3 Mask Design of the Planar Test Structures XXXVIII
Curriculum Vitae XXXIX
List of Scientific Publications XLI
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:72882 |
| Date | 26 November 2020 |
| Creators | Winkler, Felix |
| Contributors | Bartha, Johann W., Wenger, Christian, Technische Universität Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
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