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A K-band SiGe Super-Regenerative Amplifier for FMCW Radar Active Reflector Applications

A K-band integrated super-regenerative amplifier (SRA) in a 130nm SiGe BiCMOS technology is designed and characterized. The circuit is based on a novel stacked transistor differential cross-coupled oscillator topology, with a controllable tail current for quenching the oscillations. The fabricated integrated circuit (IC) occupies an area of 0.63mm2, and operates at the free-running center frequency of 25.3 GHz. Characterization results show circuit operation from a minimum input power
level required for a phase coherent output as −110 dBm, and the input power level corresponding to the linear to logarithmic mode transition of −85 dBm, the lowest reported for K-band integrated logarithmic mode SRAs to date to the knowledge
of the authors. The measured output power is 7.8dBm into a 100 differential load. The power consumption of the circuit is 110mW with no quench signal applied, and 38mW with 30 % duty cycle quenching. The quench waveform designed for the
reported measurement result is also discussed.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35127
Date22 August 2019
CreatorsThayyil, Manu Viswambharan, Li, Songhui, Joram, Niko, Ellinger, Frank
PublisherInstitute of Electrical and Electronics Engineers, Inc. (IEEE)
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation1531-1309, 1558-1764, 10.1109/LMWC.2018.2839063, info:eu-repo/grantAgreement/Europäische Kommission/Horizon2020/636286//Lynceus2Market An innovative people localisation system for safe evacuation of large passenger ships/Lynceus2Market

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