Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD /

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Includes bibliographical references.

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1. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20WANGY

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Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/641144775
Date	January 2009
Creators	Wang, Yong.
Source Sets	OCLC
Language	English
Detected Language	English
Source	View abstract or full-text.