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Molecular beam epitaxy growth and structural property of self-assembled InAs quantum dots on GaAs

Hamburg, University, Diss., 2000.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/76231469
Date January 2000
CreatorsZhang, Kai.
Publisher[S.l. : s.n.],
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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