Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy

Description

Berlin, Humboldt-University, Diss., 1999.

Links & Downloads

1. http://dochost.rz.hu-berlin.de/dissertationen/physik/muehllhaeuser-jochen/PS/Muehllhaeuser.ps
2. http://deposit.ddb.de/cgi-bin/dokserv?idn=958732159

Tags

Galliumnitrid Aluminiumnitrid

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/76099500
Date	January 1999
Creators	Müllhäuser, Jochen R.
Publisher	[S.l. : s.n.],
Source Sets	OCLC
Language	English
Detected Language	English