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A Study of Galvanic Electrochemical Etch Stop in Single Crystal Silicon

The main purpose of this thesis is to study on Galvanic electrochemical etch stop using Au/Si/TMAH formation and tries to find out the conditions that we make micro-structure should need.
Through the formation of Au/Si/TMAH, the wafer which have PN junction etch in TMAH, P type Si would be etched and N type Si would be protected. This mechanism improves the following problem¡G(1) the stress problem that due to the heavily boron-doped etch stop; (2) the non-batch fabrication and thermal stress problem that electrochemical etch stop have to use external bias and holder protection.
We use TMAH as an etchant. Its advantages are¡G(1) compatible with the COMS process, (2)adding the specific additive that can increase the selectivity of aluminum, even non-etch. The application of this research will be more elasticity.
Finally, for testing and verifying the feasibility of the parameters, author applied the designing conditions to fabricate the beam structure.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0901104-031619
Date01 September 2004
CreatorsCheng, Chi-Hau
ContributorsYuan-Fang Chou, Chien-Hsiang Chao, Cheng-Tang Pan
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0901104-031619
Rightsnot_available, Copyright information available at source archive

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