Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Description

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/2903/kellyd20914.pdf

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Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/166229357
Date	January 1900
Creators	Kelly, David Quest.
Publisher	[Austin, Tex. : University of Texas Libraries,
Source Sets	OCLC
Language	English
Detected Language	English