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Vliv elektronového svazku na grafenové polem řízené tranzistory / Influence of electron beam on graphene field effect transistors

This diploma thesis deals with electrical conductivity of a graphene sample, preparation of a graphene field-effect transistor and his irradiation by electron beam. In the theoretical part of the thesis, we describe electronic properties of graphene, preparation of graphene by CVD and its transfer to Si substrate with SiO_2 layer. Experimental part of this thesis is focused on the preparation of a graphene field-effect transistor for use in UHV conditions. Futher describes electron beam scanning over the transistor and creation of current maps of tranzistor. In the last part, the thesis deals with influence of electron beam on transport properties of graphene layer and doping of graphene layer by electron beam.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:320004
Date January 2017
CreatorsMareček, David
ContributorsČech,, Vladimír, Čechal, Jan
PublisherVysoké učení technické v Brně. Fakulta strojního inženýrství
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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