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Příprava grafenu a výzkum jeho fyzikálních vlastností / Fabrication of Graphene and Study of its Physical Properties

This doctoral thesis is focused on the preparation of graphene layers by Chemical Vapor Deposition (CVD) and their utilization for fabrication and characterization of field effect transistors. The theoretical part of the thesis deals with different methods of graphene production and measurement of its transport properties. In the first part of the experimental section the growth of polycrystalline graphene and individual graphene crystals with sizes up to 300 m is investigated. Further, graphene layer was also grown on an atomically flat copper foils, which were fabricated in order to achieve the growth of graphene of higher quality. Subsequently, the transport properties of field effect transistors produced from the grown layers were measured. The last two chapters deal with a doping of graphene layer by gallium atoms and X-ray radiation. Whereas the deposition of gallium atoms on the graphene surface causes chemical doping of graphene layer by charge transfer, X-ray irradiation of graphene field effect transistors induces the ionization of positively charged defects in dielectrics, which electrostatically dope a graphene layer.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:371775
Date January 2018
CreatorsProcházka, Pavel
ContributorsRezek, Bohuslav, Kalbáč,, Martin, Dub, Petr
PublisherVysoké učení technické v Brně. Fakulta strojního inženýrství
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/doctoralThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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