This thesis provides the study of graphene’s electrostatic interaction with the substrate surrounding it. Mathematical models based on current experimental configurations of graphene field-effect transistors (FET) are developed and analyzed. The conductivity and mobility of charge carriers in graphene are examined in the presence of impurities trapped in the substrate near graphene. The
impurities encompass a wide range of possible structures and parameters, including different types of impurities, their distance from graphene, and the spatial correlation between them. Furthermore, we extend our models to analyze the influence of impurities on the fluctuations of the electrostatic
potential and the charge carrier density in the plane of graphene. The results of our mathematical
models are compared with current experimental results in the literature.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:OWTU.10012/7804 |
| Date | January 2013 |
| Creators | Anicic, Rastko |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
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