The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x, is described to possess a significant capacity towards ion exchange in acidic and basic solutions, enabling films of HafSOx to be cleanly and readily be converted to oxide films by neutralization. The optical properties, composition and morphology of these oxide films are characterized. The fabrication of mixed metal oxide films is demonstrated via solution and ion exchange routes.
This thesis also explores the photoresist chemistry of HafSOx resists. A photoreaction mechanism based on the decomposition of peroxide is proposed. In addition, the patterning of HafSOx films by 193 nm, extreme ultraviolet (EUV) and electron beam radiation is described, and the influence of composition on its photoresist properties is studied. / Graduation date: 2012
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/29732 |
| Date | 01 May 2012 |
| Creators | Telecky, Alan J. |
| Contributors | Keszler, Douglas A. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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