Return to search

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory

Ferroelectric field-effect transistors (FeFET) based on hafnium oxide offer great opportunities for Logic-in-Memory applications, due to their natural ability to combine logic (transistor) and memory (ferroelectric material), their low-power operation, and CMOS compatible integration. Besides aggressive scaling, dense integration of FeFETs is necessary to make electronic circuits more area-efficient. This paper investigates the impact of ultra-dense co-integration of a FeFET and an n-type selector FET, sharing the same active area, arranged in a 2TNOR memory array. The examined FeFETs exhibit a very similar switching behavior as FeFETs arranged in a standard AND-type array, indicating that the ultra-dense co-integration does not degrade the FeFET performance, and thus, paves the path to a very fine-grained, ultra-dense Logic-in-Memory implementation. Based on this densely integrated 2TNOR array we propose a very compact design of a 4-to-1 multiplexer with a build-in look-up table, thus directly merging logic and memory.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:79724
Date23 June 2022
CreatorsBreyer, Evelyn T., Mulaosmanovic, Halid, Trommer, Jens, Melde, Thomas, Dünkel, Stefan, Trentzsch, Martin, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-7281-1539-9, 10.1109/ESSDERC.2019.8901735, info:eu-repo/grantAgreement/Europäische Union/Horizon 2020 research and innovation program/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO

Page generated in 0.0018 seconds