Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) SiO₂ and high-k gate dielectrics

Description

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/2565/lid02009.pdf

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/82369022
Date	January 1900
Creators	Li, Fei,
Publisher	[Austin, Tex. : University of Texas Libraries,
Source Sets	OCLC
Language	English
Detected Language	English