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Electroreflectance of Au/GaN

Electroreflectance (ER) spectra of Schottky-barrier Au/n-GaN have been measured at various dc biased voltages (Vbias). The ER spectra have exhibited excitonic signals beneath band-gap energy (Eg ). In addition, Franz-Keldysh oscillations (FKOs) were also observed above Eg. The FKOs come from the former region, and the excitonic signals come from the latter region. When Vbias = 0, they are mixed. As reverse Vbias is increased, they become more separated. Furthermore, strength of surface electric field (Fs) can be deduced from the period of the FKOs. From the plot of versus Vbias, barrier height of 1.2 V and carrier concentration were obtained.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0703107-152805
Date03 July 2007
CreatorsHsieh, Cheng-Chih
ContributorsLi-Wei Tu, Dong-Po Wang, Yan-Ten Lu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703107-152805
Rightscampus_withheld, Copyright information available at source archive

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