Return to search

Technology and physics of gate recessed GaN AlGaN FETs

Stuttgart, Univ., masters thesis, 2003.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/315562867
Date January 2003
CreatorsMalik, Adil Mahmood.
Publisher[S.l. : s.n.],
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeOnline-Publikation.
SourceKostenfrei

Page generated in 0.002 seconds