In this work, the interfacial electronic property between N-type LaAlO3/TiO2-SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy (STM/S). With the consideration of the tip-induced band bending effect during STM measurements and in conjunction with the three-dimensional theoretically analysis, the schematic band structure of the hetero-structured SrTiO3/LaAlO3 is also revealed.
Results indicate that the magnitude of the built-in field on the LaAlO3 is (30¡Ó5) mV/Å. The band bending on SrTiO3 side at the heterointerface is also observed. The band downshift of SrTiO3 side at the interface is 0.31 eV with about 0.8 nm decay length.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0905112-165617 |
| Date | 05 September 2012 |
| Creators | Huang, Po-Cheng |
| Contributors | Mitch. M.C. Chou, Ya-Ping Chiu, Yung-Sung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0905112-165617 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.0013 seconds