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An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /

Techn. Hochsch., Diss.--Zürich.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/255293574
Date January 2005
CreatorsSchnyder, Iwan.
PublisherKonstanz : Hartung-Gorre,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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