Back Amorphous-Crystalline silicon Heterojunction (BACH) solar cells which combine the benefits of back contact and heterojunction silicon solar cells have been fabricated at the University of Toronto. p- and n-type amorphous silicon deposited at low temperature (~<200 oC) by DC Saddle-Field PECVD system forms interdigitated hetero-emitter and base contacts on the rear-side. A photolithography approach using thermal oxide for electrical isolation demonstrates the proof-of-concept. Three methods for fabricating simplified and advanced BACH cells were explored. The best performing 1 cm2 cell showed an AM1.5G conversion efficiency of 8.11%, VOC = 0.536 V, JSC = 20.1 mA/cm2 and FF = 75.5%. The BACH cell performance is limited by poor surface passivation and un-optimized cell design. With completely low temperature processing, highly passivated front and rear surfaces, and independent optimization of front-side optical antireflective features and rear-side electrical junctions and contacts, the BACH cell has the potential of becoming highly cost competitive.
| Identifer | oai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/18322 |
| Date | 19 January 2010 |
| Creators | Hertanto, Anthony Iman |
| Contributors | Kherani, Nazir P., Zukotynski, Stefan |
| Source Sets | University of Toronto |
| Language | en_ca |
| Detected Language | English |
| Type | Thesis |
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