Abstrate
Co1-XO polycrystals, prepared by sintering at 1600oC with or without Mg2+-dopant ,were thermally etched at 400-1500oC for 10 min-12hr and studied by scanning electron microscopy regard to the effects of temperature and Mg2+-dopant on etching development. In low etching temperature (400-800 oC), vacancy relaxation process and spinel precipitate produced on the surface of Co1-XO-MgO polycrystals. In high etching temperature (1500 oC), Co1-XO epitaxy was spread on the steps and ledges. In addition, Co1-XO was thermally etched at 1500 oC for 10min to 12hr, we found triangular to hexagonal etch pits were produced. However, Mg2+-dopant changed the geometric shape of the pit opening. Besides, growth hillocks with corrugated terrace steps at edge and a pit at center showed that growth and etching of crystal can happen in the same time.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0802104-134224 |
| Date | 02 August 2004 |
| Creators | Huang, Chang-ning |
| Contributors | Pouyan Shen, Ker-chang Hsieh, Der-shin Gan |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0802104-134224 |
| Rights | not_available, Copyright information available at source archive |
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