To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compatible HfO₂ and ZrO₂ based thin films [2], [3], the promise of ultra-low power steep-slope devices seems within reach. However, concerns have been raised about switching-speed limitations and unavoidable hysteresis in NC devices [4], [5]. Nevertheless, it was shown that NC effects without hysteresis can be observed in fast pulsed voltage measurements on ferroelectric/dielectric capacitors [6], which was recently confirmed using ferroelectric Hf₀.₅ Zr₀.₅ O₂[7], [8]. While in these works only the integrated charge after each pulse was studied, here we investigate for the first time if the transient voltage and charge characteristics are also hysteresis-free.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77575 |
| Date | 26 January 2022 |
| Creators | Hoffmann, M., Slesazeck, S., Mikolajick, T. |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English, German |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-72812-112-3, 10.1109/DRC46940.2019.9046415 |
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