This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/7449 |
| Date | 01 1900 |
| Creators | Tran, D. V., Lam, Yee Cheong, Zheng, H. Y., Murukeshan, V. M., Chai, J.C., Hardt, David E. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Article |
| Format | 967927 bytes, application/pdf |
| Relation | Innovation in Manufacturing Systems and Technology (IMST); |
Page generated in 0.0018 seconds